国内会議はこちら。


    学術講演会(国際会議)

  1. T. Takahashi, Y. Shimogaki, T. Yoshimi, H. Itoh, J. Aoyama, J. Ueda, and H. Komiyama ; Effect of plasma treatment on the growth process of blanket aluminum chemical vapor depostion ; Proceedings of advanced metallization and interconnect systems for ULSI applications in 1997 ; pp. 257-262 ; Materials Research Society, Warrendale, PA, USA (1998).

  2. T. Takahashi, Y. Shimogaki, T. Yoshimi, H. Ito, J. Aoyama, J. Ueda, and H. Komiyama ; Underlayer dependence of blanket aluminum-CVD ; 1997 Proceedings of Fourteenth International VLSI Multilevel Interconnection Conference(VMIC) ; pp. 369-374 (1997).

  3. T. Takahashi, K. Hagiwara, Y. Egashira, and H. Komiyama ; Computer-Aided Reaction Design (CARD) to Investigate the Control of SiH4/O2 CVD by Gas-Phase Additives ; Proceedings of the thirteenth international conference on chemical vapor deposition ; pp. 151-156 (1996).

    (T. Takahashi, K. Hagiwara, Y. Egashira, and H. Komiyama ; Computer-Aided Reaction Design (CARD) to Investigate the Control of SiH4/O2 CVD by Gas-Phase Additives ; Extended abstracts of 189th society meeting in 1996 ; Vol. 96-1 ; pp. 1012-1013 ; Electrochemical Society, NJ, USA (1996).)

  4. T. Takahashi, K. Hagiwara, Y. Egashira, and H. Komiyama ; Using Computer-Aided Reaction Design to Investigate the Control of SiH4/O2 Chemical Vapor Deposition by the Gas-phase Additive, C2H4 ; 1995 Proceedings of Dielectrics for VLSI/ULSI Multilevel Interconnection Conference(DUMIC) ; pp. 183-189 (1995).

  5. Y. Egashira, S. Shiga, T. Takahashi, and H. Komiyama ; Effects of gas phase additives to SiH4/O2 reaction system to deposit SiO2 ; Extended abstracts of 183rd society meeting in 1993 ; Vol. 93-1 ; pp. 1807-1808 ; Electrochemical Society, NJ, USA (1993).

足りない...。

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